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2 PRINCIPLES OF OPERATION
LHF16KS1
1FFFFF
6
The LH28F160S5HNS-S1 Flash memory includes an
on-chip WSM to manage block erase, full chip erase,
(multi) word/byte write and block lock-bit
configuration functions. It allows for: 100% TTL-level
control inputs, fixed power supplies during block
erase, full chip erase, (multi) word/byte write and
block lock-bit configuration, and minimal processor
overhead with RAM-Like interface timings.
After initial device power-up or return from deep
power-down mode (see Bus Operations), the device
defaults to read array mode. Manipulation of external
memory control pins allow array read, standby, and
output disable operations.
Status register, query structure and identifier codes
can be accessed through the CUI independent of the
V PP voltage. High voltage on V PP enables successful
block erase, full chip erase, (multi) word/byte write
and block lock-bit configuration. All functions
associated with altering memory contents ? block
erase, full chip erase, (multi) word/byte write and
block lock-bit configuration, status, query and
identifier codes ? are accessed via the CUI and
verified through the status register.
Commands are written using standard
microprocessor write timings. The CUI contents serve
as input to the WSM, which controls the block erase,
full chip erase, (multi) word/byte write and block lock-
bit configuration. The internal algorithms are
regulated by the WSM, including pulse repetition,
internal verification, and margining of data.
Addresses and data are internally latch during write
cycles. Writing the appropriate command outputs
array data, accesses the identifier codes, outputs
query structure or outputs status register data.
Interface software that initiates and polls progress of
block erase, full chip erase, (multi) word/byte write
and block lock-bit configuration can be stored in any
block. This code is copied to and executed from
system RAM during flash memory updates. After
successful completion, reads are again possible via
the Read Array command. Block erase suspend
allows system software to suspend a block erase to
read or write data from any other block. Write
suspend allows system software to suspend a (multi)
word/byte write to read data from any other flash
memory array location.
1F0000
1EFFFF
1E0000
1DFFFF
1D0000
1CFFFF
1C0000
1BFFFF
1B0000
1AFFFF
1A0000
19FFFF
190000
18FFFF
180000
17FFFF
170000
16FFFF
160000
15FFFF
150000
14FFFF
140000
13FFFF
130000
12FFFF
120000
11FFFF
110000
10FFFF
100000
0FFFFF
0F0000
0EFFFF
0E0000
0DFFFF
0D0000
0CFFFF
0C0000
0BFFFF
0B0000
0AFFFF
0A0000
09FFFF
090000
08FFFF
080000
07FFFF
070000
06FFFF
060000
05FFFF
050000
04FFFF
040000
03FFFF
030000
02FFFF
020000
01FFFF
010000
00FFFF
000000
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
64K-byte Block
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
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4
3
2
1
0
Figure 3. Memory Map
Rev. 2.0
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